AO4441 60v p-channel mosfet general description p roduct summary v ds i d (at v gs =-10v) - 4a r ds(on) (at v gs =-10v) < 100m w r ds(on) (at v gs = -4.5v) < 130m w symbol v ds the AO4441 uses advanced trench technology to provide e xcellent r ds(on) , and ultra-low low gate charge. this d evice is suitable for use as a load switch or in pwm applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted -60v drain-source voltage -60 g d s soic-8 t op view bottom view d d d d s s s g v gs i dm t j , t stg symbol t 10s steady-state steady-state r q j l maximum junction-to-lead c c/w c/w maximum junction-to-ambient a 21 75 30 t a =25c t a =70c p ower dissipation a p d pulsed drain current b continuous drain c urrent a t a =25c a i d -4 - 3.1 -20 v 20 gate-source voltage units parameter typ max c/w r q j a 24 5 4 40 maximum junction-to-ambient a thermal characteristics w 3.1 2 t a =70c j unction and storage temperature range -55 to 150 c rev.2.0: august 2013 www.aosmd.com page 1 of 5 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4441 symbol min typ max units bv dss -60 v v ds =-48v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -1 -2.1 -3 v 80 100 t j =125c 130 102 130 m w g fs 10 s v sd -0.77 -1 v i s -4 a c iss 930 1120 pf c oss 85 pf c rss 35 pf r g 7.2 9 w q g (10v) 16 20 nc q g (4.5v) 8 10 nc q gs 2.5 nc q gd 3.2 nc t d(on) 8 ns t r 3.8 ns t 31.5 ns electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =-250 m a, v gs =0v v gs =-10v, i d =-4a r ds(on) static drain-source on-resistance i dss m a v ds =v gs, i d =-250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current m w i s =-1a,v gs =0v v ds =-5v, i d =-4a v gs =-4.5v, i d =-3a forward transconductance diode forward voltage turn-on rise time turn-off delaytime maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =-10v, v ds =-30v, r l =7.5 w , r =3 w reverse transfer capacitance v gs =0v, v ds =-30v, f=1mhz switching parameters gate resistance f=1mhz total gate charge v gs =-10v, v ds =-30v, i d =-4a gate source charge gate drain charge total gate charge t d(off) 31.5 ns t f 7.5 ns t rr 27 35 ns q rr 32 nc this product has been designed and qualified for the consumer market. applications or uses as critical c omponents in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time b ody diode reverse recovery charge i f =-4a, di/dt=100a/ m s turn-off delaytime i f =-4a, di/dt=100a/ m s turn-off fall time r gen =3 w a: the value of r q ja i s measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25 c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25 c. the soa curve provides a single pulse rating. rev.2.0: august 2013 www.aosmd.com page 2 of 5 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4441 typical electrical and thermal characteristics 0 2 4 6 8 1 0 0 1 2 3 4 5 6 -i d (a) -v gs (volts) figure 2: transfer characteristics 70 8 0 90 100 110 0 2 4 6 8 10 r ds(on) (m w w w w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage 0.80 1 .00 1.20 1.40 1.60 1.80 2.00 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v g s =-4.5v i d =-3a v g s =-10v i d =-4a 25 c 125 c v d s =-5v v g s =-4.5v v g s =-10v 0 5 1 0 15 20 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics v gs =-3v -4v -6 v -10v -4.5v - 5v -3.5v 1.0e-05 1 .0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -i s (a) -v sd (volts) figure 6: body-diode characteristics 25 c 125 c 60 8 0 100 120 140 160 180 200 2 4 6 8 10 r ds(on) (m w w w w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage i d = -4a 25 c 125 c rev.2.0: august 2013 www.aosmd.com page 3 of 5 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4441 typical electrical and thermal characteristics 0.1 1 .0 10.0 100.0 0.1 1 10 100 -i d (amps) -v ds (volts) -v gs > or equal to 4.5v figure 9: maximum forward biased safe operating area (note e) 10 m s 1s 1ms dc r d s(on) limited t j (max) =150 c t a =25 c 100 m s 0.1s 10s 0 2 4 6 8 1 0 0 5 10 15 20 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 3 00 600 900 1200 1500 0 5 10 15 20 25 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c i ss c oss c rss v ds = -30v i d =-4a 0 1 0 20 30 40 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) 10ms t j(m ax) =150 c t a =25 c 0.01 0 .1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impedance d=t on / t t j,pk =t a +p dm .z q ja .r q ja r q ja =75 c/w in descending order d =0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse rev.2.0: august 2013 www.aosmd.com page 4 of 5 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4441 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar a r bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d (off) f off d (on) vdd vgs vgs rg dut vdc vgs id vgs - + i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i rev.2.0: august 2013 www.aosmd.com page 5 of 5 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
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